Search results
Mar 4, 2020 · Growing single-crystal hBN on such high-symmetry surface planes as Cu (111) 5, 8 is widely believed to be impossible, even in theory. Nonetheless, here we report the successful epitaxial growth of...
- Metrics
Metrics - Wafer-scale single-crystal hexagonal boron nitride...
- Full Size Image
Full Size Image - Wafer-scale single-crystal hexagonal boron...
- Extended Data Fig. 10 Diagrams and Photographs Illustrating hBN Transfer
Extended Data Fig. 10 Diagrams and Photographs Illustrating...
- Extended Data Fig. 1 Analysis of Cu (111) Crystal Orientation on C Sapphire Substrates
Extended Data Fig. 1 Analysis of Cu (111) Crystal...
- Extended Data Fig. 7 STM Images of hBN/Cu (111)
Extended Data Fig. 7 STM Images of hBN/Cu (111) -...
- Extended Data Fig. 4 STM Images From Randomly Selected Locations
Extended Data Fig. 4 STM Images From Randomly Selected...
- Extended Data Fig. 3 Statistical Analysis of The Orientation Distribution of Triangular hBN Flakes
Extended Data Fig. 3 Statistical Analysis of The Orientation...
- Extended Data Fig. 5 STM Characterization of The Atomic Structure of Monolayer hBN on Cu (111)
Extended Data Fig. 5 STM Characterization of The Atomic...
- Metrics
TLDR. The obtained single-crystal hBN, incorporated as an interface layer between molybdenum disulfide and hafnium dioxide in a bottom-gate configuration, enhanced the electrical performance of transistors and paves the way to future 2D electronics. Expand. View on Springer. [PDF] Semantic Reader. Save to Library. Create Alert. Cite. 373 Citations.
One key challenge with 2D semiconductors is to avoid the formation of charge scattering and trap sites from adjacent dielectrics. An insulating van der Waals layer of hexagonal boron nitride (hBN) provides an excellent interface dielectric, efficiently reducing charge scattering 2,3.
This reliable approach to producing wafer-scale single-crystal hBN paves the way to future 2D electronics. Ultrathin two-dimensional (2D) semiconducting layered materials offer great potential for extending Moore's law of the number of transistors in an integrated circuit<sup>1</sup>.
2017. Backbone engineering of diketopyrrolopyrrole-based conjugated polymers through random terpolymerization for improved mobility–stretchability property. YC Lin, YW Huang, CC Hung, YC Chiang, CK Chen, LC Hsu, CC Chueh, ... ACS Applied Materials & Interfaces 12 (45), 50648-50659. , 2020.
May 31, 2021 · Single-crystal hexagonal boron nitride monolayer epitaxially grown on Cu (111) thin film across a wafer. We demonstrate single crystal growth of wafer-scale hexagonal boron nitride (hBN), an insulating atomic thin monolayer, on high-symmetry index surface plane Cu (111).
An insulating van der Waals layer of hexagonal boron nitride (hBN) provides an excellent interface dielectric, eficiently reducing charge scattering2,3. Recent studies have shown the growth of...
