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SiO 2 occurs in interlayer insulating films and STI. When SiO 2 films are polished, a silica-based slurry is mainly used, and KOH (potassium hydroxide) and NH 4 OH (ammonium hydroxide) are used as dispersants.
Jun 23, 2021 · Three types of SiO 2 (HDP- SiO 2, TEOS—SiO 2, and thermal—SiO 2) and one type of Si 3 N 4 (PE-Si 3 N 4) films were employed as target surfaces on standard Si wafers.
Jul 12, 2018 · Amorphous SiO 2 (a-SiO 2) thin films are widely used in integrated circuits (ICs) due to their excellent thermal stability and insulation properties. In this paper, the thermal...
Jan 1, 2021 · Abstract. SiO 2 thin films were prepared with radio frequency magnetron sputtering on quartz glass substrates, and the effects of sputtering power on the stoichiometric ratio, microstructure, surface morphology and optical properties of the film within 300–1100 nm were investigated.
Feb 22, 2016 · The SiO 2 films prepared using PE-CVD showed high purity and good stoichiometry with a dielectric constant of ~4. In addition, the PE-ALD process of the SiO 2 films exhibited well-saturated and almost linear growth characteristics of ~1.3 Å cycle −1 without notable incubation cycles, producing pure SiO 2 films.
The SiO 2 film with the thickness of 500 nm had the highest resistance to external pressure, while the SiO 2 film with the thickness of 2000 nm had the lowest. Irreversible plastic deformation occurred in the three SiO 2 thin films with different thicknesses during the nanoindentation process.
Aug 23, 2018 · For a multilayered configuration of SiO 2 film created by plasma enhanced chemical vapor deposition (PECVD), the thermal stress and growth-caused stress are two intrinsic stresses.
